型号:

IPD530N15N3 G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 150V 21A TO252-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPD530N15N3 G PDF
标准包装 2,500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 150V
电流 - 连续漏极(Id) @ 25° C 21A
开态Rds(最大)@ Id, Vgs @ 25° C 53 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大) 4V @ 35µA
闸电荷(Qg) @ Vgs 12nC @ 10V
输入电容 (Ciss) @ Vds 887pF @ 75V
功率 - 最大 68W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 带卷 (TR)
其它名称 IPD530N15N3 G-ND
SP000521720
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